2014年诺贝尔物理学奖得主Hiroshi Amano和Isamu Akasaki论著。

摘要：InN has been expected to be a suitable material for electronic devices such as high mobility transistors because of its small effective mass compared to other nitrides. Heteroepitaxial InN films were grown by metalorganic vapor-phase epitaxy. The films have been structurally characterized by triple-axis x-ray diffraction ~XRD! analysis in terms of lattice-mismatch dependence and InN film thickness dependence, and Hall measurements have been performed. In the XRD measurement, v and v –2u scans were used, and the degree of tilting ~the linewidth of x-ray signal, Dvc) @~0002! reflection# and that of twisting (Dva) @~101¯ 0! reflection# have been separated. In addition, the degree of distribution of lattice constant c (D2u c) @~0002! reflection# of InN films has been assessed. For study of the lattice-mismatch dependence, growth of InN films on GaN, AlN and directly on sapphire substrates was performed, and accordingly, Dvc was found to range from about 500 to 4000 arcsec, and D2u c from about 400 to 700 arcsec.