Utilizing the coupled metal oxide semiconductor field-effect transistor and triboelectric nanogenerator, we demonstrate an external force triggered  controlled contact electrification field-effect transistor (CE-FET), in which an electrostatic potential across the gate and source is created by a vertical
contactelectrificationbetweenthegatematerialanda “foreign”object, and the carrier transport between drain and source can be tuned/controlled by the contact-induced electrostatic potential instead of the traditional gate voltage. With the two contacted frictional layers vertically separated by 80 μm, the drain
current is decreased from 13.4 to 1.9 μA in depletion mode and increased from 2.4 to 12.1 μA in enhance...................