2014年诺贝尔物理学奖得主Shuji Nakamura论著。

摘要：High-efÞciency light-emitting diodes emitting amber, green, blue, and ultraviolet light have been obtained through the use of an InGaN active layer instead of a GaN active layer. The localized energy states caused by In composition ßuctuation in the InGaN active layer are related to the high efÞciency of the InGaN-based emitting devices. The blue and green InGaN quantum-well structure light-emitting diodes with luminous efÞciencies of 5 and 30 lumens per watt, respectively, can be made despite the large number of threading dislocations (13 108 to 1 3 1012 cm22). Epitaxially laterally overgrown GaN on sapphire reduces the number of threading dislocations originating from the interface of the GaN epilayer with the sapphire substrate. InGaN multi-quantum-well structure laser diodes formed on the GaN layer above the SiO2 mask area can have a lifetime of more than 10,000 hours. Dislocations increase the threshold current density of the laser diodes.